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PD - 94536
IRLR3802 IRLU3802
Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters l Power Management for Netcom, Computing and Portable Applications.
HEXFET(R) Power MOSFET
VDSS
12V
RDS(on) max
8.5m
Qg
27nC
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current
D-Pak IRLR3802
I-Pak IRLU3802
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
12 12 84 60 320 88 44 0.59 -55 to + 175
Units
V V A W W mW/C C
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient
Typ.
--- --- ---
Max.
1.7 40 110
Units
C/W
Notes through are on page 9
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1
8/22/02
IRLR/U3802
Static @ TJ = 25C (unless otherwise specified)
BVDSS
VDSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th)
VGS(th)/TJ
IDSS IGSS gfs Qg Qgs1 Q gs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss
Min. 12 --- --- --- 0.6 --- --- --- --- --- 31 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.009 6.5 --- --- -3.2 --- --- --- --- --- 27 3.6 2.0 10 11 12 28 11 14 21 17 2490 2150 530
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 8.5 VGS = 4.5V, ID = 15A m 30 VGS = 2.8V, ID = 12A 1.9 V VDS = VGS, ID = 250A --- mV/C 100 VDS = 9.6V, VGS = 0V A 250 VDS = 9.6V, VGS = 0V, TJ = 125C 200 VGS = 12V nA -200 VGS = -12V --- S VDS = 6.0V, ID = 12A 41 --- VDS = 6.0V --- VGS = 5.0V --- nC ID = 6.0A --- See Fig.16 --- --- nC VDS = 10V, VGS = 0V --- VDD = 6.0V, VGS = 4.5V --- ns ID = 12A --- Clamped Inductive Load --- --- VGS = 0V --- pF VDS = 6.0V --- = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
300 20
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- 0.81 0.65 52 54 50 50 84 A 320 1.2 --- 78 81 75 75 V ns nC ns nC
VSD trr Qrr trr Qrr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V TJ = 125C, IS = 12A, VGS = 0V TJ = 25C, IF = 12A, VR=20V di/dt = 100A/s TJ = 125C, IF = 12A, VR=20V di/dt = 100A/s
2
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IRLR/U3802
1000
VGS 10V 4.5V 3.5V 2.5V 2.3V 2.0V 1.8V BOTTOM 1.5V TOP
1000
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
VGS 10V 4.5V 3.5V 2.5V 2.3V 2.0V 1.8V BOTTOM 1.5V TOP
10
10
1
1.5V
1
1.5V
0.1
0.01 0.1 1
20s PULSE WIDTH Tj = 25C
10
0.1 0.1 1
20s PULSE WIDTH Tj = 175C
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1.5
RDS(on) , Drain-to-Source On Resistance
ID = 84A VGS = 4.5V
ID, Drain-to-Source Current ()
T J = 25C
100
T J = 175C
10
(Normalized)
1.0
1
0 1.0 2.0 3.0
VDS = 5.0V 20s PULSE WIDTH
4.0 5.0 6.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLR/U3802
100000 VGS = 0V, f = 1 MHZ Ciss = C + C , Cds SHORTED gs gd Crss = C gd Coss =C +C ds gd
12 ID= 6.0A
VGS , Gate-to-Source Voltage (V)
VDS = 12V
10 8 6 4 2 0
C, Capacitance (pF)
10000
Ciss Coss
1000
Crss
100 1 10 100
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.0
1000 OPERATION IN THIS AREA LIMITED BY RDS (on)
100.0 T J = 175C 10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100sec
1msec 10 Tc = 25C Tj = 175C Single Pulse 1 0 1 10 100 10msec
1.0
T J = 25C VGS = 0V
0.1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLR/U3802
LD VDS
100 LIMITED BY PACKAGE 80
ID , Drain Current (A)
D.U.T VDD
60
VGS Pulse Width < 1s Duty Factor < 0.1%
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
25 50 75 100 125 150 175
0 T C , Case Temperature (C)
10%
VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tf
td(off)
tr
Fig 10b. Switching Time Waveforms
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01
0.01
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR/U3802
5000
EAS, Single Pulse Avalanche Energy (mJ)
15V
TOP
VDS
L
DRIVER
4000
BOTTOM
ID 8.0A 14A 20A
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
3000
A
0.01
2000
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
1000
0 25 50 75 100 125 150 175
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
1.4
Current Regulator Same Type as D.U.T.
VGS(th) Gate threshold Voltage (V)
1.2
12V
50K .2F .3F
ID = 250A
1.0
D.U.T.
0.8
+ V - DS
VGS
0.6
3mA
0.4
IG
ID
Current Sampling Resistors
0.2 -75 -50 -25 0 25 50 75 100 125 150 175
Fig 14. Gate Charge Test Circuit
T J , Temperature ( C )
Fig 13. Threshold Voltage Vs. Temperature
6
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IRLR/U3802
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id Vds Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Waveform
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7
IRLR/U3802
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 1.27 (.050) 0.88 (.035)
2.38 (.094) 2.19 (.086)
1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018)
6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) MIN. 10.42 (.410) 9.40 (.370) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) M AMB NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006).
0.58 (.023) 0.46 (.018)
2.28 (.090)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE AS SEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IF IER LOGO
IRFU120 12 916A 34
ASS EMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A
8
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IRLR/U3802
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 1.27 (.050) 0.88 (.035)
2.38 (.094) 2.19 (.086) 0.58 (.023) 0.46 (.018) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
6.45 (.245) 5.68 (.224) 1.52 (.060) 1.15 (.045) 1 -B2.28 (.090) 1.91 (.075) 9.65 (.380) 8.89 (.350) 2 3 6.22 (.245) 5.97 (.235)
NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006).
3X
1.14 (.045) 0.76 (.030)
3X
0.89 (.035) 0.64 (.025) M AMB
1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018)
2.28 (.090) 2X
0.25 (.010)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 IN THE AS S EMBLY LINE "A" PART NUMBER INTERNAT IONAL RECTIFIER LOGO
IRFU120 919A 78 56
DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A
AS S EMBLY LOT CODE
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9
IRLR/U3802
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Starting TJ = 25C, L = 1.4mH
RG = 25, IAS = 20A.
* When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrialmarket. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.8/02
10
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